发明授权
US09059158B2 Semiconductor device having under-bump metallization (UBM) structure and method of forming the same
有权
具有凹凸下金属化（UBM）结构的半导体器件及其形成方法
- 专利标题： Semiconductor device having under-bump metallization (UBM) structure and method of forming the same
- 专利标题（中）： 具有凹凸下金属化（UBM）结构的半导体器件及其形成方法
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申请号： US14335084申请日： 2014-07-18
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公开(公告)号： US09059158B2公开(公告)日： 2015-06-16
- 发明人: Tsung-Fu Tsai , Yian-Liang Kuo , Chih-Horng Chang
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址： TW
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW
- 代理机构： Lowe Hauptman & Ham, LLP
- 主分类号： H01L23/02
- IPC分类号： H01L23/02 ; H01L23/498 ; H01L23/00 ; H01L21/768 ; H01L23/535
摘要：
A semiconductor device comprises a semiconductor substrate, an under-bump metallization (UBM) structure overlying the semiconductor substrate, and a solder bump overlying and electrically connected to the UBM structure. The UBM structure comprises a first metallization layer comprising a first metal, a second metallization layer comprising a second metal different from the first metal, and a first intermetallic compound (IMC) layer between the first metallization layer and the second metallization layer, the first IMC layer comprising the first metal and the second metal.
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