Invention Grant
- Patent Title: Bottom electrode for MRAM device
- Patent Title (中): MRAM器件底电极
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Application No.: US12927670Application Date: 2010-11-19
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Publication No.: US08969982B2Publication Date: 2015-03-03
- Inventor: Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
- Applicant: Rongfu Xiao , Cheng T. Horng , Ru-Ying Tong , Chyu-Jinh Torng , Tom Zhong , Witold Kula , Terry Kin Ting Ko , Wei Cao , Wai-Ming J. Kan , Liubo Hong
- Applicant Address: US CA Milpitas
- Assignee: Headway Technologies, Inc.
- Current Assignee: Headway Technologies, Inc.
- Current Assignee Address: US CA Milpitas
- Agency: Saile Ackerman LLC
- Agent Stephen B. Ackerman; Rosemary L.S. Pike
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/12 ; H01L43/08
Abstract:
A multi-layered bottom electrode for an MTJ device on a silicon nitride substrate is described. It comprises a bilayer of alpha tantalum on ruthenium which in turn lies on a nickel chrome layer over a second tantalum layer.
Public/Granted literature
- US20110133300A1 Bottom electrode for MRAM device Public/Granted day:2011-06-09
Information query
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