发明授权
- 专利标题： Method of manufacturing dual gate oxide devices
- 专利标题（中）： 双栅极氧化器件的制造方法
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申请号： US14040737申请日： 2013-09-30
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公开(公告)号： US08962494B2公开(公告)日： 2015-02-24
- 发明人: Jun Huang , Zhibiao Mao , Ermin Chong
- 申请人： Shanghai Huali Microelectronics Corporation
- 申请人地址： CN Shanghai
- 专利权人： Shanghai Huali Microelectronics Corporation
- 当前专利权人： Shanghai Huali Microelectronics Corporation
- 当前专利权人地址： CN Shanghai
- 优先权： CN201310177577 20130514
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/469 ; H01L21/311 ; H01L21/027 ; H01L21/3213 ; H01L21/033 ; H01L21/308 ; H01L21/28
摘要：
The present invention provides method of manufacturing dual gate oxide devices. The method comprises coating photoresist on the substrate which is deposited by an oxide thin film; removing some of the photoresist by exposure and development to divide the oxide thin film into a first area to be etched and a second area coated by the remained photoresist; coating RELACS material on the remained photoresist and heating to form a protective film based on the crosslinking reaction between the RELACS material and the high molecular compounds in the photoresist; performing UV radiation to strengthen and cure the protective film; removing the oxide thin film in the first area by etching and removing the remained photoresist; and depositing again an oxide firm to form an oxide layer of different thickness in the first area and the second area so as to form a dual gate oxide structure.
公开/授权文献
- US20140342565A1 METHOD OF MANUFACTURING DUAL GATE OXIDE DEVICES 公开/授权日：2014-11-20
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