Invention Grant
- Patent Title: Deposition of metal films using alane-based precursors
- Patent Title (中): 使用基于丙烷的前体沉积金属膜
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Application No.: US13669571Application Date: 2012-11-06
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Publication No.: US08927059B2Publication Date: 2015-01-06
- Inventor: Xinliang Lu , David Thompson , Jeffrey W. Anthis , Mei Chang , Seshadri Ganguli , Wei Tang , Srinivas Gandikota , Atif Noori
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: C23C16/06
- IPC: C23C16/06 ; C23C16/08 ; C23C16/10 ; C23C16/22 ; C23C16/455 ; H01L21/285 ; H01L21/768

Abstract:
Methods of depositing pure metal and aluminum alloy metal films. Certain methods comprises contacting a substrate surface with first and second precursors, the first precursor comprising an aluminum precursor selected from dimethylaluminum hydride, alane coordinated to an amine, and a compound having a structure represented by: wherein R is a C1-C6 alkyl group, and the second precursor comprising a metal halide. Other methods relate to sequentially exposing a substrate to a first and second precursor, the first precursor comprising an aluminum precursor as described above, and the second precursor comprising Ti(NR′2)4 or Ta(NR′2)5, wherein R′ is an alkyl, alkenyl, alkynyl, keto or aldehyde group.
Public/Granted literature
- US20130115383A1 DEPOSITION OF METAL FILMS USING ALANE-BASED PRECURSORS Public/Granted day:2013-05-09
Information query
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