Invention Grant
US08885398B2 Spin current generator for STT-MRAM or other spintronics applications
有权
用于STT-MRAM或其他自旋电子学应用的自旋电流发生器
- Patent Title: Spin current generator for STT-MRAM or other spintronics applications
- Patent Title (中): 用于STT-MRAM或其他自旋电子学应用的自旋电流发生器
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Application No.: US13911917Application Date: 2013-06-06
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Publication No.: US08885398B2Publication Date: 2014-11-11
- Inventor: Jun Liu , Gurtej Sandhu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Fletcher Yoder, P.C.
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/16 ; B82Y25/00 ; G01R33/09 ; G01R33/12 ; H01F10/32 ; B82Y10/00
Abstract:
Spin current generators and systems and methods for employing spin current generators. A spin current generator may be configured to generate a spin current polarized in one direction, or a spin current selectively polarized in two directions. The spin current generator may by employed in spintronics applications, wherein a spin current is desired.
Public/Granted literature
- US20130272061A1 SPIN CURRENT GENERATOR FOR STT-MRAM OR OTHER SPINTRONICS APPLICATIONS Public/Granted day:2013-10-17
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