发明授权
US08853669B2 Limiting strain relaxation in III-nitride hetero-structures by substrate and epitaxial layer patterning
有权
通过衬底和外延层图案化限制III族氮化物异质结构中的应变松弛
- 专利标题： Limiting strain relaxation in III-nitride hetero-structures by substrate and epitaxial layer patterning
- 专利标题（中）： 通过衬底和外延层图案化限制III族氮化物异质结构中的应变松弛
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申请号： US13281775申请日： 2011-10-26
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公开(公告)号： US08853669B2公开(公告)日： 2014-10-07
- 发明人: James S. Speck , Anurag Tyagi , Steven P. Denbaars , Shuji Nakamura
- 申请人： James S. Speck , Anurag Tyagi , Steven P. Denbaars , Shuji Nakamura
- 申请人地址： US CA Oakland
- 专利权人： The Regents of the University of California
- 当前专利权人： The Regents of the University of California
- 当前专利权人地址： US CA Oakland
- 代理机构： Gates & Cooper LLP
- 主分类号： H01L33/16
- IPC分类号： H01L33/16 ; H01L33/12 ; H01L29/04 ; H01L33/00 ; B82Y20/00 ; H01S5/343 ; H01S5/32 ; H01L29/778 ; H01L29/20
摘要：
A method of fabricating a substrate for a semipolar III-nitride device, comprising patterning and forming one or more mesas on a surface of a semipolar III-nitride substrate or epilayer, thereby forming a patterned surface of the semipolar III-nitride substrate or epilayer including each of the mesas with a dimension l along a direction of a threading dislocation glide, wherein the threading dislocation glide results from a III-nitride layer deposited heteroepitaxially and coherently on a non-patterned surface of the substrate or epilayer.
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