发明授权
- 专利标题： Semiconductor device and manufacturing method thereof
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US14095817申请日： 2013-12-03
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公开(公告)号： US08810034B2公开(公告)日： 2014-08-19
- 发明人: Junji Noguchi , Takayuki Oshima , Noriko Miura , Kensuke Ishikawa , Tomio Iwasaki , Kiyomi Katsuyama , Tatsuyuki Saito , Tsuyoshi Tamaru , Hizuru Yamaguchi
- 申请人： Renesas Electronics Corporation
- 申请人地址： JP Kawasaki-shi
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kawasaki-shi
- 代理机构： Miles & Stockbridge P.C.
- 优先权： JP2003-083348 20030325
- 主分类号： H01L23/52
- IPC分类号： H01L23/52
摘要：
The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
公开/授权文献
- US20140091468A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 公开/授权日：2014-04-03
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