Invention Grant
US08797792B2 Non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junction
有权
具有第一磁性隧道结和第二磁性隧道结的位单元处的不可逆状态
- Patent Title: Non-reversible state at a bitcell having a first magnetic tunnel junction and a second magnetic tunnel junction
- Patent Title (中): 具有第一磁性隧道结和第二磁性隧道结的位单元处的不可逆状态
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Application No.: US14022364Application Date: 2013-09-10
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Publication No.: US08797792B2Publication Date: 2014-08-05
- Inventor: Hari M. Rao , Jung Pil Kim , Seung H. Kang , Xiaochun Zhu , Tae Hyun Kim , Kangho Lee , Xia Li , Wah Nam Hsu , Wuyang Hao , Jungwon Suh , Nicholas K. Yu , Matthew Michael Nowak , Steven M. Millendorf , Asaf Ashkenazi
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Sam Talpalatsky; Nicholas J. Pauley; Joseph Agusta
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/16 ; G11C11/14 ; G11C17/02 ; G11C17/16 ; G11C29/02
Abstract:
A memory device includes a magnetic tunnel junction (MTJ) bitcell. The MTJ bitcell includes a first MTJ and a second MTJ. The memory device further includes programming circuitry configured to generate a non-reversible state at the bitcell by applying a program signal to a selected one of the first MTJ and the second MTJ of the bitcell. The non-reversible state corresponds to a value of the MTJ bitcell that is determined by comparing a first value read at the first MTJ and a second value read at the second MTJ.
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