Invention Grant
- Patent Title: Semiconductor device, a method of manufacturing the same and an electronic device
- Patent Title (中): 半导体装置及其制造方法以及电子装置
-
Application No.: US13216515Application Date: 2011-08-24
-
Publication No.: US08698289B2Publication Date: 2014-04-15
- Inventor: Yukihiro Satou , Takeshi Otani , Hiroyuki Takahashi , Toshiyuki Hata , Ichio Shimizu
- Applicant: Yukihiro Satou , Takeshi Otani , Hiroyuki Takahashi , Toshiyuki Hata , Ichio Shimizu
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Mattingly & Malur, PC
- Priority: JP2003-054638 20030228
- Main IPC: H01L23/495
- IPC: H01L23/495

Abstract:
The semiconductor device is high in both heat dissipating property and connection reliability in mounting. The semiconductor device includes a semiconductor chip, a resin sealing member for sealing the semiconductor chip, a first conductive member connected to a first electrode formed on a first main surface of the semiconductor chip, and a second conductive member connected to a second electrode formed on a second main surface opposite to the first main surface of the semiconductor chip, the first conductive member being exposed from a first main surface of the resin sealing member, and the second conductive member being exposed from a second main surface opposite to the first main surface of the resin sealing member and also from side faces of the resin sealing member.
Public/Granted literature
- US20110309487A1 SEMICONDUCTOR DEVICE, A METHOD OF MANUFACTURING THE SAME AND AN ELECTRONIC DEVICE Public/Granted day:2011-12-22
Information query
IPC分类: