Invention Grant
- Patent Title: Method for fabricating patterned layer
- Patent Title (中): 图案化层的制造方法
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Application No.: US13684019Application Date: 2012-11-21
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Publication No.: US08679728B2Publication Date: 2014-03-25
- Inventor: Chien-Chao Huang , Chun-Chi Chen , Shyi-Long Shy , Cheng-San Wu , Fu-Liang Yang
- Applicant: National Applied Research Laboratories
- Applicant Address: TW Taipei
- Assignee: National Applied Research Laboratories
- Current Assignee: National Applied Research Laboratories
- Current Assignee Address: TW Taipei
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: G03F7/20
- IPC: G03F7/20 ; G03C5/00
Abstract:
A method for fabricating a patterned layer is disclosed. Firstly, a semiconductor substrate is provided. Then, a precursory gas on the semiconductor substrate is formed. Finally, a patterned layer on the semiconductor substrate is deposited by reacting the precursory gas with at least one electron beam or at least one ion beam. The present invention not only fabricates a patterned layer on the substrate in a single step but also achieves a high lithographic resolution and avoids remains of contaminations by using the properties of the electron beam or the ion beam and the precursory gas.
Public/Granted literature
- US20130084530A1 METHOD FOR FABRICATING PATTERNED LAYER Public/Granted day:2013-04-04
Information query
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