发明授权
US08609059B2 Production method, production vessel and member for nitride crystal
有权
生产方法，生产容器和氮化物晶体元件
- 专利标题： Production method, production vessel and member for nitride crystal
- 专利标题（中）： 生产方法，生产容器和氮化物晶体元件
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申请号： US13481989申请日： 2012-05-29
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公开(公告)号： US08609059B2公开(公告)日： 2013-12-17
- 发明人: Yutaka Mikawa , Makiko Kiyomi , Yuji Kagamitani , Toru Ishiguro , Yoshihiko Yamamura
- 申请人： Yutaka Mikawa , Makiko Kiyomi , Yuji Kagamitani , Toru Ishiguro , Yoshihiko Yamamura
- 申请人地址： JP Tokyo JP Sendai-shi JP Tokyo
- 专利权人： Mitsubishi Chemical Corporation,Tohoku University,The Japan Steel Works, Ltd.
- 当前专利权人： Mitsubishi Chemical Corporation,Tohoku University,The Japan Steel Works, Ltd.
- 当前专利权人地址： JP Tokyo JP Sendai-shi JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2009-269777 20091127
- 主分类号： C30B11/00
- IPC分类号： C30B11/00 ; C30B35/00 ; C30B28/06 ; C30B19/00 ; B01J3/04 ; B01D9/00 ; C01B21/06
摘要：
To provide a production method for a nitride crystal, where a nitride crystal can be prevented from precipitating in a portion other than on a seed crystal and the production efficiency of a gallium nitride single crystal grown on the seed crystal can be enhanced. In a method for producing a nitride crystal by an ammonothermal method in a vessel containing a mineralizer-containing solution, out of the surfaces of said vessel and a member provided in said vessel, at least a part of the portion coming into contact with said solution is constituted by a metal or alloy containing one or more atoms selected from the group consisting of tantalum (Ta), tungsten (W) and titanium (Ti), and has a surface roughness (Ra) of less than 1.80 μm.
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