- 专利标题: Lithographic apparatus and device manufacturing method
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申请号: US11882853申请日: 2007-08-06
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公开(公告)号: US08493548B2公开(公告)日: 2013-07-23
- 发明人: Vladimir Vitalevich Ivanov , Vadim Yevgenyevich Banine , Konstantin Nikolaevich Koshelev , Vladimir Mihailovitch Krivtsun
- 申请人: Vladimir Vitalevich Ivanov , Vadim Yevgenyevich Banine , Konstantin Nikolaevich Koshelev , Vladimir Mihailovitch Krivtsun
- 申请人地址: NL Veldhoven
- 专利权人: ASML Netherlands B.V.
- 当前专利权人: ASML Netherlands B.V.
- 当前专利权人地址: NL Veldhoven
- 代理机构: Pillsbury Winthrop Shaw Pittman LLP
- 主分类号: G03B27/54
- IPC分类号: G03B27/54 ; G03B27/72 ; G03B27/32 ; G03B27/42
摘要:
A lithographic system includes a source configured to generate a radiation, the source including a cathode and an anode, the cathode and the anode configured to create a discharge in a fuel located in a discharge space so as to generate a plasma, the discharge space including, in use, a substance configured to adjust radiation emission by the plasma so as to control a volume defined by the plasma; a pattern support configured to hold a patterning device, the patterning device configured to pattern the radiation to form a patterned beam of radiation; a substrate support configured to support a substrate; and a projection system configured to project the patterned beam of radiation onto the substrate.
公开/授权文献
- US20090040491A1 Lithographic apparatus and device manufacturing method 公开/授权日:2009-02-12
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