发明授权
US08470462B2 Structure and method for enhancing interfacial perpendicular anisotropy in CoFe(B)/MgO/CoFe(B) magnetic tunnel junctions
有权
在CoFe（B）/ MgO / CoFe（B）磁隧道结中增强界面垂直各向异性的结构和方法
- 专利标题： Structure and method for enhancing interfacial perpendicular anisotropy in CoFe(B)/MgO/CoFe(B) magnetic tunnel junctions
- 专利标题（中）： 在CoFe（B）/ MgO / CoFe（B）磁隧道结中增强界面垂直各向异性的结构和方法
-
申请号： US12927939申请日： 2010-11-30
-
公开(公告)号： US08470462B2公开(公告)日： 2013-06-25
- 发明人: Cheng T. Horng , Ru-Ying Tong , Guenole Jan
- 申请人： Cheng T. Horng , Ru-Ying Tong , Guenole Jan
- 申请人地址： US CA Milpitas
- 专利权人： MagIC Technologies, Inc.
- 当前专利权人： MagIC Technologies, Inc.
- 当前专利权人地址： US CA Milpitas
- 代理机构： Saile Ackerman LLC
- 代理商 Stephen B. Ackerman
- 主分类号： G11B5/706
- IPC分类号： G11B5/706 ; H01L43/08 ; G01R33/09 ; G11C11/16
摘要：
A STT-RAM MTJ is disclosed with a MgO tunnel barrier formed by natural oxidation process. A Co10Fe70B20/NCC/Co10Fe70B20, Co10Fe70B20/NCC/Co10Fe70B20/NCC, or Co10Fe70B20/NCC/Co10Fe70B20/NCC/Co10Fe70B20 free layer configuration where NCC is a nanocurrent channel layer made of Fe(20%)-SiO2 is used to minimize Jc0 while enabling higher thermal stability, write voltage, read voltage, Ho, and Hc values that satisfy 64 Mb design requirements. The NCC layer is about 10 Angstroms thick to match the minimum Fe(Si) grain diameter size. The MTJ is annealed with a temperature of about 330° C. to maintain a high magnetoresistive ratio while maximizing Hk⊥(interfacial) for the free layer thereby reducing Heff and lowering the switching current. The Co10Fe70B20 layers are sputter deposited with a low pressure process with a power of about 15 Watts and an Ar flow rate of 40 standard cubic centimeters per minute to lower Heff for the free layer.
公开/授权文献
信息查询
IPC分类:
