Invention Grant
- Patent Title: Semiconductor device and method of making semiconductor device
- Patent Title (中): 半导体器件及制造半导体器件的方法
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Application No.: US13495195Application Date: 2012-06-13
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Publication No.: US08405226B2Publication Date: 2013-03-26
- Inventor: John U. Knickerbocker , Chirag S. Patel
- Applicant: John U. Knickerbocker , Chirag S. Patel
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: McGinn IP Law Group, PLLC
- Agent Vazken Alexanian
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40

Abstract:
A method of fabricating a semiconductor device including forming a micro-chip comprising a thinned-wafer having one or more components fabricated thereon disposed between a carrier and a semiconductor chip, the micro-chip being electrically connected to the semiconductor chip under a higher consumption macro of the semiconductor chip and including a thickness which is less than a thickness of the semiconductor chip, forming an interconnect between the semiconductor chip and the carrier, forming an interconnect between the micro-chip and the semiconductor chip, and forming an interconnect between the micro-chip and the carrier. The micro-chip includes a thinned micro-chip having a thickness of less than 20 microns and the semiconductor chip includes plural semiconductor chips formed as a chip stack. The micro-chip includes a plurality of micro-chips formed on the plural semiconductor chips, such that the semiconductor device is a three-dimensional integrated circuit.
Public/Granted literature
- US20120248629A1 SEMICONDUCTOR DEVICE AND METHOD OF MAKING SEMICONDUCTOR DEVICE Public/Granted day:2012-10-04
Information query
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