Invention Grant
- Patent Title: Integrated circuit system employing low-k dielectrics and method of manufacture thereof
- Patent Title (中): 采用低k电介质的集成电路系统及其制造方法
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Application No.: US12796610Application Date: 2010-06-08
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Publication No.: US08358007B2Publication Date: 2013-01-22
- Inventor: Dong Kyun Sohn , Wuping Liu , Fan Zhang , Juan Boon Tan , Jing Hui Li , Bei Chao Zhang , Luying Du , Wei Liu , Yeow Kheng Lim
- Applicant: Dong Kyun Sohn , Wuping Liu , Fan Zhang , Juan Boon Tan , Jing Hui Li , Bei Chao Zhang , Luying Du , Wei Liu , Yeow Kheng Lim
- Applicant Address: SG Singapore
- Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agent Mikio Ishimaru
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/768

Abstract:
A method of manufacture of an integrated circuit system includes: fabricating a substrate having an integrated circuit; applying a low-K dielectric layer over the integrated circuit; forming a via and a trench, in the low-K dielectric layer, over the integrated circuit; forming a structure surface by a chemical-mechanical planarization (CMP) process; and applying a direct implant to the structure surface for forming an implant layer and a metal passivation layer including repairing damage, to the low-K dielectric layer, caused by the CMP process.
Public/Granted literature
- US20100314763A1 INTEGRATED CIRCUIT SYSTEM EMPLOYING LOW-K DIELECTRICS AND METHOD OF MANUFACTURE THEREOF Public/Granted day:2010-12-16
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