Invention Grant
US08358007B2 Integrated circuit system employing low-k dielectrics and method of manufacture thereof 有权
采用低k电介质的集成电路系统及其制造方法

Integrated circuit system employing low-k dielectrics and method of manufacture thereof
Abstract:
A method of manufacture of an integrated circuit system includes: fabricating a substrate having an integrated circuit; applying a low-K dielectric layer over the integrated circuit; forming a via and a trench, in the low-K dielectric layer, over the integrated circuit; forming a structure surface by a chemical-mechanical planarization (CMP) process; and applying a direct implant to the structure surface for forming an implant layer and a metal passivation layer including repairing damage, to the low-K dielectric layer, caused by the CMP process.
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