发明授权
- 专利标题： Finfets and methods for forming the same
- 专利标题（中）： Finfets及其形成方法
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申请号： US12761686申请日： 2010-04-16
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公开(公告)号： US08264021B2公开(公告)日： 2012-09-11
- 发明人: Li-Shyue Lai , Tsz-Mei Kwok , Chih Chieh Yeh , Clement Hsingjen Wann
- 申请人： Li-Shyue Lai , Tsz-Mei Kwok , Chih Chieh Yeh , Clement Hsingjen Wann
- 申请人地址： TW
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW
- 代理机构： Lowe Hauptman Ham & Berner, LLP
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
A Fin field effect transistor (FinFET) includes a fin-channel body over a substrate. A gate electrode is disposed over the fin-channel body. At least one source/drain (S/D) region is disposed adjacent to the fin-channel body. The at least one S/D region is substantially free from including any fin structure.
公开/授权文献
- US20110079829A1 FINFETS AND METHODS FOR FORMING THE SAME 公开/授权日：2011-04-07
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