发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US12382678申请日: 2009-03-20
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公开(公告)号: US08228158B2公开(公告)日: 2012-07-24
- 发明人: Hiroshi Tsuda
- 申请人: Hiroshi Tsuda
- 申请人地址: JP Kawasaki-shi, Kanagawa
- 专利权人: Renesas Electronics Corporation
- 当前专利权人: Renesas Electronics Corporation
- 当前专利权人地址: JP Kawasaki-shi, Kanagawa
- 代理机构: McGinn IP Law Group, PLLC
- 优先权: JP2008-096918 20080403
- 主分类号: H01H85/04
- IPC分类号: H01H85/04 ; H01L23/52 ; H01L23/62 ; H01L21/82 ; H01L21/44
摘要:
A semiconductor device has a semiconductor substrate and a first electrical fuse and a second electrical fuse, which are provided on the semiconductor substrate. The first electrical fuse has a first upper layer wire and a first lower layer wire formed in different wire layers, and a via for connecting the first upper layer wire to the first lower layer wire. The second electrical fuse has a second upper layer wire and a second lower layer wire formed in different wire layers, and a via for connecting the second upper layer wire to the second lower layer wire. The semiconductor device has a connection portion for connecting the above described first upper layer wire of the first electrical fuse to the second lower layer wire of the second electrical fuse. The connection portion connects the first electrical fuse and the second electrical fuse in series.
公开/授权文献
- US20090251275A1 Semiconductor device 公开/授权日:2009-10-08
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