Invention Grant
- Patent Title: Spin-transfer torque memory self-reference read method
- Patent Title (中): 自旋转矩记忆自参考读取方式
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Application No.: US12968441Application Date: 2010-12-15
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Publication No.: US08194444B2Publication Date: 2012-06-05
- Inventor: Yuankai Zheng , Yiran Chen , Xiaobin Wang , Zheng Gao , Dimitar V. Dimitrov , Wenzhong Zhu , Yong Lu
- Applicant: Yuankai Zheng , Yiran Chen , Xiaobin Wang , Zheng Gao , Dimitar V. Dimitrov , Wenzhong Zhu , Yong Lu
- Applicant Address: US CA Scotts Valley
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Scotts Valley
- Agency: Mueting Raasch & Gebhardt PA
- Main IPC: G11C11/14
- IPC: G11C11/14 ; G11C11/00 ; G11C7/00 ; G11C7/02
Abstract:
Self-reference reading a magnetic tunnel junction data cell methods are disclosed. An illustrative method includes applying a read voltage across a magnetic tunnel junction data cell and forming a read current. The magnetic tunnel junction data cell has a first resistance state. The read voltage is sufficient to switch the magnetic tunnel junction data cell resistance. The method includes detecting the read current and determining if the read current remains constant during the applying step. If the read current remains constant during the applying step, then the first resistance state of the magnetic tunnel junction data cell is the resistance state that the read voltage was sufficient to switch the magnetic tunnel junction data cell to.
Public/Granted literature
- US20110085373A1 SPIN-TRANSFER TORQUE MEMORY SELF-REFERENCE READ METHOD Public/Granted day:2011-04-14
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