发明授权
- 专利标题： Dislocation engineering using a scanned laser
- 专利标题（中）： 使用扫描激光的位错工程
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申请号： US12242990申请日： 2008-10-01
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公开(公告)号： US08138066B2公开(公告)日： 2012-03-20
- 发明人: Chung Woh Lai , Xiao Hu Liu , Anita Madan , Klaus W. Schwarz , J. Campbell Scott
- 申请人： Chung Woh Lai , Xiao Hu Liu , Anita Madan , Klaus W. Schwarz , J. Campbell Scott
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Cantor Colburn LLP
- 代理商 Vazken Alexanian
- 主分类号： H01L21/322
- IPC分类号： H01L21/322
摘要：
A method for generating patterned strained regions in a semiconductor device is provided. The method includes directing a light-emitting beam locally onto a surface portion of a semiconductor body; and manipulating a plurality of dislocations located proximate to the surface portion of the semiconductor body utilizing the light-emitting beam, the light-emitting beam being characterized as having a scan speed, so as to produce the patterned strained regions.
公开/授权文献
- US20100081259A1 DISLOCATION ENGINEERING USING A SCANNED LASER 公开/授权日：2010-04-01
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