发明授权
US08110453B2 Low temperature thin film transistor process, device property, and device stability improvement
有权
低温薄膜晶体管工艺，器件性能和器件稳定性的提高
- 专利标题： Low temperature thin film transistor process, device property, and device stability improvement
- 专利标题（中）： 低温薄膜晶体管工艺，器件性能和器件稳定性的提高
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申请号： US12425228申请日： 2009-04-16
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公开(公告)号： US08110453B2公开(公告)日： 2012-02-07
- 发明人: Ya-Tang Yang , Beom Soo Park , Tae Kyung Won , Soo Young Choi , John M. White
- 申请人： Ya-Tang Yang , Beom Soo Park , Tae Kyung Won , Soo Young Choi , John M. White
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Patterson & Sheridan, L.L.P.
- 主分类号： H01L21/84
- IPC分类号： H01L21/84 ; H01L21/336 ; H01L21/20 ; H01L29/786
摘要：
A method and apparatus for forming a thin film transistor is provided. A gate dielectric layer is formed, which may be a bilayer, the first layer deposited at a low rate and the second deposited at a high rate. In some embodiments, the first dielectric layer is a silicon rich silicon nitride layer. An active layer is formed, which may also be a bilayer, the first active layer deposited at a low rate and the second at a high rate. The thin film transistors described herein have superior mobility and stability under stress.
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