发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US12984885申请日： 2011-01-05
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公开(公告)号： US08058695B2公开(公告)日： 2011-11-15
- 发明人: Tomoko Matsuda , Takashi Ide , Hiroshi Kimura
- 申请人： Tomoko Matsuda , Takashi Ide , Hiroshi Kimura
- 申请人地址： JP Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： Young & Thompson
- 优先权： JP2006-126085 20060428
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A semiconductor device includes a silicon substrate, and a NiSi layer provided on the silicon substrate aiming to suppress oxidation of the surface of a NiSi layer and the resistivity increase. The NiSi layer includes a bottom NiSi region and a top NiSi region. The bottom NiSi region provided in contact with silicon surface, and containing substantially no nitrogen. The top NiSi region is a nitrided NiSi region provided in contact with the bottom NiSi region, and containing nitrogen. The NiSi layer has a total thickness of 50 nm or below.
公开/授权文献
- US20110095380A1 SEMICONDUCTOR DEVICE 公开/授权日：2011-04-28
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