发明授权
- 专利标题： Semiconductor storage device, semiconductor device, and manufacturing method therefor
- 专利标题（中）： 半导体存储装置，半导体装置及其制造方法
-
申请号： US11956358申请日： 2007-12-14
-
公开(公告)号： US08039940B2公开(公告)日： 2011-10-18
- 发明人: Kohji Kanamori , Teiichirou Nishizaka , Noriaki Kodama , Isao Katayama , Yoshihiro Matsuura , Kaoru Ishihara , Yasushi Harada , Naruaki Minenaga , Chihiro Oshita
- 申请人： Kohji Kanamori , Teiichirou Nishizaka , Noriaki Kodama , Isao Katayama , Yoshihiro Matsuura , Kaoru Ishihara , Yasushi Harada , Naruaki Minenaga , Chihiro Oshita
- 申请人地址： JP Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： Young & Thompson
- 优先权： JP2004-070537 20040312
- 主分类号： H01L23/26
- IPC分类号： H01L23/26
摘要：
According to the present invention, a gettering layer is deposited both on the side surfaces and the bottom surface of a semiconductor chip. The semiconductor chip is then mounted on the board of a package so that a Schottky barrier is formed on the bottom surface. With this structure, metal ions that pass through the board of the package can be captured by the defect layer deposited on the side surfaces and/or the bottom surface of the semiconductor chip, and by the Schottky barrier.
公开/授权文献
信息查询
IPC分类:
