发明授权
US08017028B2 Method of increasing etchability of metals having chemical etching resistant microstructure
失效
具有耐化学蚀刻微观结构的金属的蚀刻性的提高方法
- 专利标题： Method of increasing etchability of metals having chemical etching resistant microstructure
- 专利标题（中）： 具有耐化学蚀刻微观结构的金属的蚀刻性的提高方法
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申请号： US12287772申请日： 2008-10-14
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公开(公告)号： US08017028B2公开(公告)日： 2011-09-13
- 发明人: Mark Crockett , John W. Lane , Micahel DeChellis , Chris Melcer , Erica Porras , Aneesh Khullar , Balarabe N. Mohammed
- 申请人： Mark Crockett , John W. Lane , Micahel DeChellis , Chris Melcer , Erica Porras , Aneesh Khullar , Balarabe N. Mohammed
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理商 Shirley L. Church, Esq.
- 主分类号： C03C25/68
- IPC分类号： C03C25/68
摘要：
A space-conserving integrated fluid delivery system which is particularly useful for gas distribution in semiconductor processing equipment. The invention also includes an integrated fluid flow network architecture, which may include, in addition to a layered substrate containing fluid flow channels, various fluid handling and monitoring components. The layered substrate is diffusion bonded, and the various fluid handling and monitoring components may be partially integrated or fully integrated into the substrate, depending on design and material requirements.
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