发明授权
- 专利标题： Semiconductor device, method of fabricating the same, and pattern generating method
- 专利标题（中）： 半导体装置及其制造方法以及图案生成方法
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申请号： US11619338申请日： 2007-01-03
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公开(公告)号： US07977795B2公开(公告)日： 2011-07-12
- 发明人: Kazuyuki Higashi , Noriaki Matsunaga
- 申请人： Kazuyuki Higashi , Noriaki Matsunaga
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2006-000929 20060105
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/52 ; H01L29/40
摘要：
A semiconductor device according to an embodiment of the present invention has: a semiconductor substrate; an interlayer insulating film formed above the semiconductor substrate; a protective film formed on the interlayer insulating film, the protective film having a higher density than that of the interlayer insulating film; at least one of a wiring and a dummy wiring formed in the interlayer insulating film and the protective film; and a separation wall formed within the interlayer insulating film so as to surround a low density region to separate the low density region from other regions, a sum of covering densities of the wiring and the dummy wiring being lower than a predetermined prescribed value in the low density region.
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