发明授权
- 专利标题： Nonvolatile semiconductor memory and method of manufacturing the same
- 专利标题（中）： 非易失性半导体存储器及其制造方法
-
申请号： US12285167申请日： 2008-09-30
-
公开(公告)号： US07973356B2公开(公告)日： 2011-07-05
- 发明人: Takeshi Kikuchi
- 申请人： Takeshi Kikuchi
- 申请人地址： JP Kawasaki-shi, Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kawasaki-shi, Kanagawa
- 代理机构： McGinn IP Law Group, PLLC
- 优先权： JP2007-261391 20071004
- 主分类号： H01L29/792
- IPC分类号： H01L29/792 ; H01L21/8247
摘要：
A nonvolatile semiconductor memory device includes: a semiconductor substrate; a first gate electrode formed on the semiconductor substrate through a gate insulating film; a second gate electrode formed in a side direction of the first gate electrode and electrically insulated from the first gate electrode; and an insulating film formed at least between the semiconductor substrate and the second gate electrode to trap electric charge, as an electric charge trapping film. The first gate electrode comprises a lower portion contacting the gate insulating film and an upper portion above the lower portion of the first gate electrode, and a distance between the upper portion of the first gate electrode and the second gate electrode is longer than a distance between the lower portion of the first gate electrode and the second gate electrode.
公开/授权文献
信息查询
IPC分类:
