发明授权
US07923368B2 Junction formation on wafer substrates using group IV nanoparticles 有权
使用IV族纳米粒子在晶片衬底上形成结

Junction formation on wafer substrates using group IV nanoparticles
摘要:
A method of forming a diffusion region is disclosed. The method includes depositing a nanoparticle ink on a surface of a wafer to form a non-densified thin film, the nanoparticle ink having set of nanoparticles, wherein at least some nanoparticles of the set of nanoparticles include dopant atoms therein. The method also includes heating the non-densified thin film to a first temperature and for a first time period to remove a solvent from the deposited nanoparticle ink; and heating the non-densified thin film to a second temperature and for a second time period to form a densified thin film, wherein at least some of the dopant atoms diffuse into the wafer to form the diffusion region.
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