发明授权
US07923368B2 Junction formation on wafer substrates using group IV nanoparticles
有权
使用IV族纳米粒子在晶片衬底上形成结
- 专利标题: Junction formation on wafer substrates using group IV nanoparticles
- 专利标题(中): 使用IV族纳米粒子在晶片衬底上形成结
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申请号: US12109684申请日: 2008-04-25
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公开(公告)号: US07923368B2公开(公告)日: 2011-04-12
- 发明人: Mason Terry , Homer Antoniadis , Dmitry Poplavskyy , Maxim Kelman
- 申请人: Mason Terry , Homer Antoniadis , Dmitry Poplavskyy , Maxim Kelman
- 申请人地址: US CA Sunnyvale
- 专利权人: Innovalight, Inc.
- 当前专利权人: Innovalight, Inc.
- 当前专利权人地址: US CA Sunnyvale
- 代理机构: Foley & Lardner LLP
- 主分类号: H01L21/44
- IPC分类号: H01L21/44
摘要:
A method of forming a diffusion region is disclosed. The method includes depositing a nanoparticle ink on a surface of a wafer to form a non-densified thin film, the nanoparticle ink having set of nanoparticles, wherein at least some nanoparticles of the set of nanoparticles include dopant atoms therein. The method also includes heating the non-densified thin film to a first temperature and for a first time period to remove a solvent from the deposited nanoparticle ink; and heating the non-densified thin film to a second temperature and for a second time period to form a densified thin film, wherein at least some of the dopant atoms diffuse into the wafer to form the diffusion region.
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