发明授权
- 专利标题： Stram with self-reference read scheme
- 专利标题（中）： 具有自参考读取方案
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申请号： US12390006申请日： 2009-02-20
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公开(公告)号： US07876604B2公开(公告)日： 2011-01-25
- 发明人: Yuankai Zheng , Yiran Chen , Xiaobin Wang , Zheng Gao , Dimitar V. Dimitrov , Wenzhong Zhu , Yong Lu
- 申请人： Yuankai Zheng , Yiran Chen , Xiaobin Wang , Zheng Gao , Dimitar V. Dimitrov , Wenzhong Zhu , Yong Lu
- 申请人地址： US CA Scotts Valley
- 专利权人： Seagate Technology LLC
- 当前专利权人： Seagate Technology LLC
- 当前专利权人地址： US CA Scotts Valley
- 代理机构： Campbell Nelson Whipps LLC
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; G11C7/00 ; G11C7/02
摘要：
Self-reference reading a magnetic tunnel junction data cell methods are disclosed. An illustrative method includes applying a read voltage across a magnetic tunnel junction data cell and forming a read current. The magnetic tunnel junction data cell has a first resistance state. The read voltage is sufficient to switch the magnetic tunnel junction data cell resistance. The method includes detecting the read current and determining if the read current remains constant during the applying step. If the read current remains constant during the applying step, then the first resistance state of the magnetic tunnel junction data cell is the resistance state that the read voltage was sufficient to switch the magnetic tunnel junction data cell to.
公开/授权文献
- US20100110784A1 STRAM with Self-Reference Read Scheme 公开/授权日：2010-05-06
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