发明授权
- 专利标题： Device and method of programming a magnetic memory element
- 专利标题（中）： 编程磁记忆元件的装置和方法
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申请号： US11764618申请日： 2007-06-18
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公开(公告)号： US07688616B2公开(公告)日： 2010-03-30
- 发明人: Yu-Jen Wang , Hsu-Chen Chang , Denny Tang
- 申请人： Yu-Jen Wang , Hsu-Chen Chang , Denny Tang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semicondcutor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semicondcutor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
Thus, the present disclosure provides a method of programming a memory array. At least one memory cell including a magnetic element is provided. At least one current source coupled to the magnetic element is provided. A unipolar current is supplied from the at least one current source to the magnetic element at a plurality of non-zero current levels.
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