- 专利标题： Semiconductor device manufacturing system and method for manufacturing semiconductor devices including calculating oxide film thickness using real time simulator
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申请号： US10935430申请日： 2004-09-08
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公开(公告)号： US07623937B2公开(公告)日： 2009-11-24
- 发明人: Yukihiro Ushiku , Akira Ogawa , Hidenori Kakinuma , Shunji Shuto , Masahiro Abe , Tatsuo Akiyama , Shigeru Komatsu
- 申请人： Yukihiro Ushiku , Akira Ogawa , Hidenori Kakinuma , Shunji Shuto , Masahiro Abe , Tatsuo Akiyama , Shigeru Komatsu
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JPP2003-355684 20030908; JPP2004-189971 20040628
- 主分类号： G06F19/00
- IPC分类号： G06F19/00
摘要：
The present invention provides a solution for interleaving data frames, in a semiconductor device manufacturing system in which the processing apparatus for conducting a process on any one of a semiconductor substrate and a thin film on a surface thereof; a self-diagnostic system for diagnosing a state of the processing apparatus; and a parameter fitting apparatus for maintaining a parameter of the self-diagnostic system when an inspection result of the semiconductor substrate having undergone the process has been determined to be correct, and for changing the parameter of the self-diagnostic system when the inspection result has been determined to be incorrect.
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