Invention Grant
- Patent Title: Semiconductor integrated circuit device and method of producing the same
- Patent Title (中): 半导体集成电路装置及其制造方法
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Application No.: US11043250Application Date: 2005-01-25
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Publication No.: US07394156B2Publication Date: 2008-07-01
- Inventor: Shinya Tokunaga , Shigeki Furuya , Yuuji Hinatsu
- Applicant: Shinya Tokunaga , Shigeki Furuya , Yuuji Hinatsu
- Applicant Address: JP Osaka
- Assignee: Matsushita Electric Industrial Co., Ltd.
- Current Assignee: Matsushita Electric Industrial Co., Ltd.
- Current Assignee Address: JP Osaka
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: JP2000-317038 20001017
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L27/10 ; H01L29/73 ; H01L29/74
Abstract:
A semiconductor integrated circuit device has a plurality of CMOS-type base cells arranged on a semiconductor substrate and m wiring layers, and gate array type logic cells are composed of the base cells and the wiring layers. Wiring within and between the logic cells is constituted by using only upper n (n
Public/Granted literature
- US20050127406A1 Semiconductor integrated circuit device and method of producing the same Public/Granted day:2005-06-16
Information query
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