发明授权
- 专利标题: Semiconductor apparatus
- 专利标题(中): 半导体装置
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申请号: US631634申请日: 1984-07-17
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公开(公告)号: US4672417A公开(公告)日: 1987-06-09
- 发明人: Susumu Sugiyama , Yoshio Nakamura , Harunobu Ohno , Tokimasa Kamiya
- 申请人: Susumu Sugiyama , Yoshio Nakamura , Harunobu Ohno , Tokimasa Kamiya
- 申请人地址: JPX Aichi
- 专利权人: Kabushiki Kaisha Toyota Chuo Kenkyusho and Narumi
- 当前专利权人: Kabushiki Kaisha Toyota Chuo Kenkyusho and Narumi
- 当前专利权人地址: JPX Aichi
- 优先权: JPX58-130192 19830719
- 主分类号: H01L23/48
- IPC分类号: H01L23/48 ; H01L23/047 ; H01L23/373 ; H01L23/66 ; H01L25/04 ; H01L23/50 ; H01L23/06 ; H01L29/44
摘要:
In a 3-terminal package sealed semiconductor device such as a transistor or a thyristor, an insulator formed between the respective lead conductors is made of alumina ceramic. An electrode conductor base (one of the lead conductors) for mounting a semiconductor device thereon is made of a copper-tungsten sintered alloy containing 2% by volume to 48% by volume of copper. The thermal expansion coefficient of the insulator becomes substantially the same as that of the electrode conductor base, thereby elmininating a conventionally used intermediate damping member and hence providing a compact semiconductor apparatus which has a high packaging density and which can switch a large current at high speed. The respective lead conductors have predetermined sizes to achieve high-speed large-current switching.
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