发明授权
US4447272A Method for fabricating MNOS structures utilizing hydrogen ion
implantation
失效
使用氢离子注入制造MNOS结构的方法
- 专利标题： Method for fabricating MNOS structures utilizing hydrogen ion implantation
- 专利标题（中）： 使用氢离子注入制造MNOS结构的方法
-
申请号： US443828申请日： 1982-11-22
-
公开(公告)号： US4447272A公开(公告)日： 1984-05-08
- 发明人: Nelson S. Saks
- 申请人： Nelson S. Saks
- 申请人地址： DC Washington
- 专利权人： The United States of America as represented by the Secretary of the Navy
- 当前专利权人： The United States of America as represented by the Secretary of the Navy
- 当前专利权人地址： DC Washington
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/336 ; H01L7/54 ; H01L21/263
摘要：
An improved method for reducing the density of electronic trapping states and fixed insulator charge in the thin oxide layer of an MNOS structure. The method includes the steps of implanting hydrogen ions in field region of the oxide layer and annealing the MNOS structure at 400.degree. C. to cause the ions to diffuse laterally into the gate region of the oxide layer.
信息查询
IPC分类:
