发明授权
- 专利标题： Low-resistance, fine-line semiconductor device and the method for its manufacture
- 专利标题（中）： 低电阻，细线半导体器件及其制造方法
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申请号： US959792申请日： 1978-11-13
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公开(公告)号： US4213840A公开(公告)日： 1980-07-22
- 发明人: Masahiro Omori , James N. Wholey , J. Ross Anderson
- 申请人： Masahiro Omori , James N. Wholey , J. Ross Anderson
- 申请人地址： CA Santa Clara
- 专利权人： Avantek, Inc.
- 当前专利权人： Avantek, Inc.
- 当前专利权人地址： CA Santa Clara
- 主分类号： H01L29/80
- IPC分类号： H01L29/80 ; H01L21/027 ; H01L21/28 ; H01L21/285 ; H01L21/338 ; H01L29/47 ; H01L29/812 ; H01L21/441
摘要：
A method of fabricating gate electrodes on microwave field effect transistors is described. A first layer of photo-resist is deposited and photolithographically defined on top of a semiconductor material with openings in the photoresist, corresponding to the gate electrode. In one embodiment, when drain and source electrodes have been previously formed, additional openings in the first layer of photoresist are defined that approximately overlay the drain and source electrodes. A metal layer is then deposited on top of this structure. A second layer of photoresist is then deposited and photolithographically defined on top of the first metal layer, with larger openings which overlay the openings in the first layer of photoresist. The thickness of the gate electrode, and in one embodiment, the sections overlaying the drain and source electrodes, is then increased by plating gold into the openings in the second layer of photoresist.
公开/授权文献
- US5332105A Portable dish rack 公开/授权日：1994-07-26
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