发明授权
- 专利标题: Monolithic storage array and method of making
- 专利标题(中): 单片存储阵列和制作方法
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申请号: US39804073申请日: 1973-09-17
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公开(公告)号: US3884732A公开(公告)日: 1975-05-20
- 发明人: BAITINGER UTZ G , NAJMANN KNUT K
- 申请人: IBM
- 专利权人: Ibm
- 当前专利权人: Ibm
- 优先权: US39804073 1973-09-17; DE2137976 1971-07-29; US26732472 1972-06-29
- 主分类号: G11C11/411
- IPC分类号: G11C11/411 ; H01L27/102 ; H01L29/10 ; H01L7/44 ; H01L7/64 ; H01L29/72
摘要:
A monolithic storage matrix having cells formed of multi-emitter transistors in which one emitter of each transistor forms part of the storage circuit and the other emitter of each transistor is coupled to the accessing and retrieval circuits. The transistors portions for storage are formed with bases of a given width and the transistors portions coupled to the accessing and retrieving circuits have a lesser width so that short access times are obtained while the stability of the storage circuit is maintained.
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