Invention Application
- Patent Title: CONDUCTIVE CONTACT HAVING BARRIER LAYERS WITH DIFFERENT DEPTHS
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Application No.: US18782167Application Date: 2024-07-24
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Publication No.: US20240379557A1Publication Date: 2024-11-14
- Inventor: Chia-Yang Wu , Shiu-Ko JangJian , Ting-Chun Wang , Yung-Si Yu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L21/311 ; H01L21/3213 ; H01L21/768 ; H01L29/417
Abstract:
A semiconductor device includes a transistor having a source/drain and a gate. The semiconductor device also includes a conductive contact for the transistor. The conductive contact provides electrical connectivity to the source/drain or the gate of the transistor. The conductive contact includes a plurality of barrier layers. The barrier layers have different depths from one another.
Information query
IPC分类:
