- 专利标题: SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
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申请号: US18365726申请日: 2023-08-04
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公开(公告)号: US20240339135A1公开(公告)日: 2024-10-10
- 发明人: Yong Jin JEONG , Sang Gu YEO
- 申请人: SK hynix Inc.
- 申请人地址: KR Icheon
- 专利权人: SK hynix Inc.
- 当前专利权人: SK hynix Inc.
- 当前专利权人地址: KR Icheon
- 优先权: KR 20230045257 2023.04.06
- 主分类号: G11C5/06
- IPC分类号: G11C5/06 ; H10B63/00 ; H10N70/00
摘要:
A semiconductor device may include a first contact plug, a word line electrically connected to the first contact plug and extending in a first direction, a second contact plug, a bit line extending in a second direction that intersects the first direction, and a memory cell disposed between the word line and the bit line and including a variable resistance layer. The bit line may include a first protruding part that protrudes into the memory cell, a second protruding part that is connected to the second contact plug, and a connection part that connects the first protruding part and the second protruding part and that extends in the second direction.
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