- 专利标题： TRANSISTOR WITH INTEGRATED SOURCE-DRAIN DIODE
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申请号： US18533355申请日： 2023-12-08
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公开(公告)号： US20240222504A1公开(公告)日： 2024-07-04
- 发明人: Anup Bhalla , Leonid Fursin
- 申请人： Qorvo US, Inc.
- 申请人地址： US NC Greensboro
- 专利权人： Qorvo US, Inc.
- 当前专利权人： Qorvo US, Inc.
- 当前专利权人地址： US NC Greensboro
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/10 ; H01L29/16 ; H01L29/423 ; H01L29/66
摘要：
Vertical junction field-effect transistors (VJFETs) with integrated source-drain anti-parallel diodes are described. In an embodiment, a trench VJFET with integrated source-drain anti-parallel diodes structure is coupled with a low-voltage metal oxide semiconductor field-effect transistor (MOSFET) in a dual gate cascode configuration.
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