- 专利标题： DIPOLES IN SEMICONDUCTOR DEVICES
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申请号： US18431921申请日： 2024-02-02
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公开(公告)号： US20240178319A1公开(公告)日： 2024-05-30
- 发明人: Hsiang-Pi Chang , Yen-Tien Tung , Dawei Heh , Chung-Liang Cheng , I-Ming Chang , Yao-Sheng Huang , Tzer-Min Shen , Huang-Lin Chao
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/40 ; H01L29/51 ; H01L29/66
摘要：
A semiconductor device includes a substrate, an interfacial layer formed on the semiconductor substrate, and a high-k dielectric layer formed on the interfacial layer. At least one of the high-k dielectric layer and the interfacial layer is doped with: a first dopant species, a second dopant species, and a third dopant species. The first dopant species and the second dopant species form a plurality of first dipole elements having a first polarity. The third dopant species forms a plurality of second dipole elements having a second polarity. A first concentration ratio of the first concentration of the first dopant species to the second concentration of the second dopant species of the p-type transistor is different from a second concentration ratio of the first concentration of the first dopant species to the second concentration of the second dopant species of the n-type transistor.
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