- 专利标题： THREE-DIMENSIONAL MEMORY DEVICES AND METHODS FOR FORMING THE SAME
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申请号： US17948549申请日： 2022-09-20
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公开(公告)号： US20240098989A1公开(公告)日： 2024-03-21
- 发明人: Zhengliang Xia , Wenbin Zhou , Zongliang Huo , Zhaohui Tang
- 申请人： YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- 申请人地址： CN Wuhan
- 专利权人： YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- 当前专利权人： YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- 当前专利权人地址： CN Wuhan
- 主分类号： H01L27/11556
- IPC分类号： H01L27/11556 ; H01L27/11519 ; H01L27/11526 ; H01L27/11565 ; H01L27/11573 ; H01L27/11582
摘要：
A semiconductor device includes a plurality of memory blocks. Each memory block includes a memory deck including interleaved first conductor layers and first dielectric layers, and a separation structure extending to separate two adjacent memory blocks. Each separation structure includes a dielectric stack including interleaved third dielectric layers and fourth dielectric layers. The third dielectric layers are in contact with the first dielectric layers, and the fourth dielectric layers are in contact with the first conductor layers.
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