- 专利标题: MEMORY DEVICE WITH WRITE PULSE TRIMMING
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申请号: US18352127申请日: 2023-07-13
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公开(公告)号: US20240029791A1公开(公告)日: 2024-01-25
- 发明人: Hiroki Noguchi , Yu-Der Chih , Yih Wang
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsinchu
- 分案原申请号: US17140605 2021.01.04
- 主分类号: G11C13/00
- IPC分类号: G11C13/00 ; G11C11/22 ; G11C11/16
摘要:
A memory device includes: a memory cell array comprising a plurality of memory cells; a temperature sensor configured to detect a temperature of the memory cell array; a write circuit configured to write data into the plurality of memory cells; and a controller coupled to the temperature sensor and the write circuit, wherein the controller is configured to determine a target write pulse width used by the write circuit based on the detected temperature of the memory device.
公开/授权文献
- US1751720A Weather strip for casement sashes 公开/授权日:1930-03-25
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