Invention Application
- Patent Title: FERROELECTRICALLY MODULATED SPIN ORBIT LOGIC DEVICE
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Application No.: US17469320Application Date: 2021-09-08
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Publication No.: US20230077177A1Publication Date: 2023-03-09
- Inventor: Hai Li , Dmitri Evgenievich Nikonov , Chia-Ching Lin , Tanay A. Gosavi , Ian Alexander Young
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L43/06 ; H01L43/10 ; H01L25/10

Abstract:
A spin orbit logic (SOL) device includes a first electrically conductive layer; a layer comprising a ferroelectric material (FE layer) on the first electrically conductive layer; a second electrically conductive layer on the FE layer; and a spin orbit coupling (SOC) stack including a first layer (SOC1 layer) including a first SOC material, and a second layer (SOC2 layer) including a second SOC material, the SOC1 layer adjacent the FE layer.
Information query
IPC分类: