- 专利标题: MULTIPLE CHARGED PARTICLE BEAM WRITING METHOD AND MULTIPLE CHARGED PARTICLE BEAM WRITING APPARATUS
-
申请号: US18340152申请日: 2023-06-23
-
公开(公告)号: US20230420217A1公开(公告)日: 2023-12-28
- 发明人: Hiroshi MATSUMOTO
- 申请人: NuFlare Technology, Inc.
- 申请人地址: JP Yokohama-shi
- 专利权人: NuFlare Technology, Inc.
- 当前专利权人: NuFlare Technology, Inc.
- 当前专利权人地址: JP Yokohama-shi
- 优先权: JP 22103875 2022.06.28
- 主分类号: H01J37/317
- IPC分类号: H01J37/317 ; H01J37/20 ; H01J37/147
摘要:
A multiple charged particle beam writing method according to one aspect of the present invention includes performing writing, during writing in the k-th (k being an integer of at least one) stripe region, in the k-th extended region, which is obtained by extending the irradiation region in the first direction by a predetermined extension width, while deflecting multiple charged particle beams and moving the multiple charged particle beams in the second direction, and performing writing, during writing in the (k+1)th stripe region, in the (k+1)th extended region, which is obtained by extending the irradiation region in the first direction by the extension width, while deflecting the multiple charged particle beams and moving the multiple charged particle beams in the second direction.
信息查询