Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
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Application No.: US17888451Application Date: 2022-08-15
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Publication No.: US20220392954A1Publication Date: 2022-12-08
- Inventor: Jia-Rong Wu , I-Fan Chang , Rai-Min Huang , Ya-Huei Tsai , Yu-Ping Wang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu City
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu City
- Priority: CN202010235266.X 20200330
- Main IPC: H01L27/22
- IPC: H01L27/22 ; G11C11/16 ; H01F10/32 ; H01F41/34 ; H01L23/522 ; H01L23/528 ; H01L43/02 ; H01L43/12
Abstract:
A semiconductor device includes a substrate having a logic region and a magnetoresistive random access memory (MRAM) region, a MTJ on the MRAM region, a metal interconnection on the MTJ, and a blocking layer on the metal interconnection. Preferably, the blocking layer includes a stripe pattern according to a top view and the blocking layer could include metal or a dielectric layer.
Public/Granted literature
- US11849592B2 Magnetoresistive random access memory and method for fabricating the same Public/Granted day:2023-12-19
Information query
IPC分类:
