- 专利标题: METHOD OF CUTTING CONDUCTIVE PATTERNS
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申请号: US17883576申请日: 2022-08-08
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公开(公告)号: US20220382160A1公开(公告)日: 2022-12-01
- 发明人: Chin-Hsiung HSU , Huang-Yu CHEN , Tseng-Hua OU , Wen-Hao CHEN
- 申请人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 主分类号: G03F7/20
- IPC分类号: G03F7/20 ; H05K3/00 ; G06F30/39 ; H05K3/06 ; G03F1/70 ; H01L21/3213
摘要:
A method includes: providing a first layout of a first layer over a substrate, the first layer having at least one metal pattern, and generating a second layout by placing a cut mask at a first position relative to the substrate to remove material from a first region of the at least one metal pattern to provide a first metal pattern and placing the cut mask at a second position relative to the first layer over the substrate to remove material from a second region of the at least one metal pattern to provide a second metal pattern.
公开/授权文献
- US12013643B2 Method of cutting conductive patterns 公开/授权日:2024-06-18
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