Invention Application
- Patent Title: SEMICONDUCTOR DEVICE
-
Application No.: US17637352Application Date: 2020-08-21
-
Publication No.: US20220302259A1Publication Date: 2022-09-22
- Inventor: Hiroto YAMAGIWA , Manabu YANAGIHARA , Takahiro SATO , Masahiro HIKITA , Hiroaki UENO , Yusuke KINOSHITA
- Applicant: Panasonic Intellectual Property Management Co., Ltd.
- Applicant Address: JP Osaka
- Assignee: Panasonic Intellectual Property Management Co., Ltd.
- Current Assignee: Panasonic Intellectual Property Management Co., Ltd.
- Current Assignee Address: JP Osaka
- Priority: JP2019-157572 20190830
- International Application: PCT/JP2020/031634 WO 20200821
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L29/20 ; H01L29/778 ; H01L29/10
Abstract:
A semiconductor device includes: a substrate; a first nitride semiconductor layer above the substrate; a second nitride semiconductor layer above the first nitride semiconductor layer and being greater than the first nitride semiconductor layer in band gap; and a first field-effect transistor including a first source electrode, a first drain electrode, and a first gate electrode that are above the second nitride semiconductor layer, the first source electrode and the first drain electrode being separated from each other, the first gate electrode being disposed between the first source electrode and the first drain electrode. The first field-effect transistor includes a third semiconductor layer that is above the second nitride semiconductor layer in part of a region between lower part of the first source electrode and the first gate electrode, and is separated from the first gate electrode. The third semiconductor layer and the first source electrode are electrically connected.
Information query
IPC分类:
