Invention Application
- Patent Title: THROUGH VIA STRUCTURE, SEMICONDUCTOR DEVICE INCLUDING THE THROUGH VIA STRUCTURE, AND MASSIVE DATA STORAGE SYSTEM INCLUDING THE SEMICONDUCTOR DEVICE
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Application No.: US17351486Application Date: 2021-06-18
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Publication No.: US20220302157A1Publication Date: 2022-09-22
- Inventor: Jeeyong KIM , Junghwan LEE
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2021-0036567 20210322
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L23/522 ; H01L27/11519 ; H01L27/11524 ; H01L27/11556 ; H01L27/11565 ; H01L27/1157
Abstract:
A through via structure includes a through via and a capping pattern. The through via includes a metal pattern extending in a vertical direction, and a barrier pattern on a sidewall and a lower surface of the metal pattern. The capping pattern contacts an upper surface of the through via. A lowermost surface of an edge portion of the capping pattern is not higher than a lowermost surface of a central portion of the capping pattern.
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