Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
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Application No.: US17067775Application Date: 2020-10-12
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Publication No.: US20220085210A1Publication Date: 2022-03-17
- Inventor: Chang-Po Hsiung , Ching-Chung Yang , Shan-Shi Huang , Shin-Hung Li , Nien-Chung Li , Wen-Fang Lee , Chiu-Te Lee , Chih-Kai Hsu , Chun-Ya Chiu , Chin-Hung Chen , Chia-Jung Hsu , Ssu-I Fu , Yu-Hsiang Lin
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hin-Chu City
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hin-Chu City
- Priority: CN202010965229.4 20200915
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/10 ; H01L29/423 ; H01L21/02 ; H01L21/311 ; H01L21/28 ; H01L29/66
Abstract:
A semiconductor device includes a semiconductor substrate, a recess, a first gate oxide layer, and a gate structure. The semiconductor substrate includes a first region and a second region adjacent to the first region. The recess is disposed in the first region of the semiconductor substrate, and an edge of the recess is located at an interface between the first region and the second region. At least a part of the first gate oxide layer is disposed in the recess. The first gate oxide layer includes a hump portion disposed adjacent to the edge of the recess, and a height of the hump portion is less than a depth of the recess. The gate structure is disposed on the first region and the second region of the semiconductor substrate, and the gate structure overlaps the hump portion of the first gate oxide layer in a vertical direction.
Public/Granted literature
- US11495681B2 Semiconductor device and manufacturing method thereof Public/Granted day:2022-11-08
Information query
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