- 专利标题： III-V FINS BY ASPECT RATIO TRAPPING AND SELF-ALIGNED ETCH TO REMOVE ROUGH EPITAXY SURFACE
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申请号： US17245634申请日： 2021-04-30
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公开(公告)号： US20210249410A1公开(公告)日： 2021-08-12
- 发明人: Kangguo Cheng , Jeehwan Kim
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L27/088
- IPC分类号： H01L27/088 ; H01L29/66 ; H01L21/308 ; H01L21/306 ; H01L21/02 ; H01L29/78 ; H01L29/10 ; H01L21/8234 ; H01L29/201
摘要：
A semiconductor device that includes a fin structure of a type III-V semiconductor material that is substantially free of defects, and has sidewalls that are substantially free of roughness caused by epitaxially growing the type III-V semiconductor material abutting a dielectric material. The semiconductor device further includes a gate structure present on a channel portion of the fin structure; and a source region and a drain region present on opposing sides of the gate structure.
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