Invention Application
- Patent Title: PLASMA CLEANING APPARATUS AND SEMICONDUCTOR PROCESS EQUIPMENT WITH THE SAME
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Application No.: US17133988Application Date: 2020-12-24
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Publication No.: US20210198786A1Publication Date: 2021-07-01
- Inventor: Min HUR , Woo Seok KANG , Dae-Woong KIM , Jinyoung LEE
- Applicant: KOREA INSTITUTE OF MACHINERY & MATERIALS
- Applicant Address: KR Daejeon
- Assignee: KOREA INSTITUTE OF MACHINERY & MATERIALS
- Current Assignee: KOREA INSTITUTE OF MACHINERY & MATERIALS
- Current Assignee Address: KR Daejeon
- Priority: KR10-2019-0176950 20191227
- Main IPC: C23C16/44
- IPC: C23C16/44 ; B08B7/00 ; B08B5/00 ; H01L21/67
![PLASMA CLEANING APPARATUS AND SEMICONDUCTOR PROCESS EQUIPMENT WITH THE SAME](/abs-image/US/2021/07/01/US20210198786A1/abs.jpg.150x150.jpg)
Abstract:
A plasma cleaning apparatus includes a metal chamber, a gate assembly, a dielectric, and a high voltage electrode.
The metal chamber is connected to a vacuum tube connecting the process chamber and the vacuum pump, and is provided with a first opening. The gate assembly includes a gate support fixed to the metal chamber around the first opening and having a second opening, and a gate coupled to the gate support and having a first position closing the second opening and a second position opening the second opening switchable with each other. The dielectric is coupled to the outside of the gate support around the second opening, and the high voltage electrode is positioned on an outer surface of the dielectric.
The metal chamber is connected to a vacuum tube connecting the process chamber and the vacuum pump, and is provided with a first opening. The gate assembly includes a gate support fixed to the metal chamber around the first opening and having a second opening, and a gate coupled to the gate support and having a first position closing the second opening and a second position opening the second opening switchable with each other. The dielectric is coupled to the outside of the gate support around the second opening, and the high voltage electrode is positioned on an outer surface of the dielectric.
Public/Granted literature
- US11643722B2 Plasma cleaning apparatus and semiconductor process equipment with the same Public/Granted day:2023-05-09
Information query
IPC分类: