- 专利标题： Contact Interface Engineering for Reducing Contact Resistance
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申请号： US16572812申请日： 2019-09-17
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公开(公告)号： US20210083119A1公开(公告)日： 2021-03-18
- 发明人: Mrunal A. Khaderbad , Keng-Chu Lin , Sung-Li Wang
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/768 ; H01L29/417 ; H01L29/66
摘要：
A structure includes a transistor including a first source/drain region, a source/drain contact plug over and electrically coupling to the first source/drain region, and a via over and contacting the source/drain contact plug. The via has a bottom portion having a first length, and an upper portion having a second length. The first length is greater than the second length. Both of the first length and the second length are measured in a same direction parallel to a top surface of the source/drain contact plug.
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